Initial stages of formation of a Yb-Si(111) interface |
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Authors: | T. V. Krachino M. V. Kuz’min M. V. Loginov M. A. Mittsev |
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Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | The initial stages of formation of an Yb-Si(111) interface are investigated by several methods: thermal desorption spectroscopy, atomic beam modulation, and low-energy electron diffraction. The structure of the adsorbed films and ytterbium silicide films is analyzed over a wide range of surface coverage ratios, along with the desorption kinetics of Yb atoms. The desorption activation energies of Yb atoms are measured for 3×2, 5×1, and 2×1 submonolayer structures. The temperature interval in which ytterbium silicide decomposes and the activation energy of this process are determined. It is shown that the Yb-Si(111) phase interface evolves by a mechanism similar to the Stransky-Krastanov mechanism. Fiz. Tverd. Tela (St. Petersburg) 39, 256–263 (February 1997) |
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