| 辉光放电质谱法测定高纯铟中痕量元素 |
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| 引用本文： | 刘红,李爱嫦,李继东. 辉光放电质谱法测定高纯铟中痕量元素[J]. 分析试验室, 2012, 0(5): 10-12 |
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| 作者姓名： | 刘红 李爱嫦 李继东 |
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| 作者单位： | 北京有色金属研究总院 |
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| 基金项目： | 国家科技支撑计划项目(2006BAF07B02)资助 |
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| 摘 要： | 采用辉光放电质谱法(GDMS)对高纯铟中铁、铜、铅、锌、铊、镉、锡等14种元素进行了测定,对仪器工作参数进行了优化,对预溅射过程时间的确定和质谱干扰的排除进行了讨论,结果表明,GDMS是目前具有足够灵敏度对高纯导电材料进行直接分析的有效手段。
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| 关 键 词： | 辉光放电质谱法 高纯铟 痕量元素 |
Determination of trace elements in high purity In by glow discharge mass spectrometry |
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| LIU Hong,LI Ai-chang and LI Ji-dong. Determination of trace elements in high purity In by glow discharge mass spectrometry[J]. Chinese Journal of Analysis Laboratory, 2012, 0(5): 10-12 |
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| Authors: | LIU Hong LI Ai-chang LI Ji-dong |
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| Affiliation: | (General Research Institute for Non-ferrous Metals,Beijing 100088) |
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| Abstract: | 14 trace impurity elements including Fe,Cu,Pb,Zn,Tl,Cd,Sn,ect.in high purity In were determined by glow discharge mass spectromery(GDMS).The working parameters of GDMS were optimized.The determination of pre-sputtering time and the elimination of the influence of spectral interference were discussed in detail.It is found that GDMS is the only effective method which has sufficient sensitivity on the measurement of high purity conductive material. |
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| Keywords: | Glow discharge mass spectrometry High purity indium Determination of trace impurity |
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