Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate |
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Authors: | Sang-Ho Seo Min-Woong Seo Jae-Sung Kong Jang-Kyoo Shin Pyung Choi |
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Affiliation: | (1) Department of Electronics, Kyungpook National University, 1370 Sankyuk-dong, Buk-ku, Deagu, 702-701, Korea |
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Abstract: | In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode. |
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Keywords: | CMOS image sensor active pixel sensor n-well/gate-tied PMOSFET-type photodetector with built-in transfer gate |
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