Time-dependent dielectric breakdown characteristics ofN2O oxide under dynamic stressing |
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| Authors: | Ahn J Joshi A Lo GQ Kwong D-L |
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| Institution: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
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| Abstract: | Time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors with thin (120-Å) N2O gate oxide under dynamic unipolar and bipolar stress have been studied and compared to those with control thermal gate oxide of identical thickness. Results show that N2O oxide has significant improvement in t BD (2×under-Vg unipolar stress, 20×under+Vg unipolar stress, and 10×under bipolar stress). The improvement of tBD in N2O oxide is attributed to the suppressed electron trapping and enhanced hole detrapping due to the nitrogen incorporation at the SiO2/Si interface |
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