Design considerations for guardring-free planar InGaAs/InP avalanche photodiode |
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| Authors: | Yury Vasileuski Sergei Malyshev Alexander Chizh |
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| Affiliation: | 1. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Logoiski trakt 22, 220090, Minsk, Republic of Belarus
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| Abstract: | Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p+-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed. |
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