1. Department of Electrical and Computer Engineering, Center for Optical Technologies, Lehigh University, Bethlehem, PA, 18015, USA 2. OptiComp Corporation, Zephyr Cove, NV, 89448, USA 3. JDS Uniphase Corporation, San Jose, CA, 95134, USA
Abstract:
We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.