Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes |
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| Authors: | Bocang Qiu Stewart McDougall Dan Yanson John H Marsh |
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| Institution: | 1. Intense Ltd., 4 Stanley Boulevard, Hamilton International Technology Park, Blantyre, Glasgow, G72 0BN, Scotland, UK
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| Abstract: | The effect of quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T 0. |
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