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Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode |
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| Authors: | X. D. Wang W. D. Hu X. S. Chen W. Lu H. J. Tang T. Li H. M. Gong |
| Affiliation: | 1. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu Tian Road, Shanghai, 200083, China 2. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai, 200083, China |
| Abstract: | We report on 2D simulations of dark current for InP/In0.53Ga0.47aAs/InP p-i-n photodiode. Our simulation result is in good agreement with experiment confirming that generation-recombination effect is the dominant source of the dark current at low bias. Effects of the thickness and doping concentration of the absorption layer on the dark current are discussed in detail. |
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