Tunnel electrode: Part II. Electron-transfer theory at an n-type semiconductor tunnel electrode |
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Authors: | Kenkichiro Kobayashi Yoshihiro Aikawa Mitsunori Sukigara |
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Institution: | Institute of Industrial Science, University of Tokyo, 7-22-1, Roppongi, Minato, Tokyo 106 Japan |
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Abstract: | The formula for the cathodic tunnel current at an n-type semiconductor tunnel electrode was derived from the double adiabatic perturbation theory considering the vibration in the first coordination sphere. In the low-temperature limiting case, the apparent difference between the normal and the abnormal regions was observed in both the transfer coefficient α and the activation energy E* as a function of potential. It was concluded that the semiconductor tunnel electrode has advantageous characteristics for investigation of the electron-transfer mechanism at high overvoltage. |
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Keywords: | To whom correspondence should be addressed |
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