| 一种新型的涂丝钙离子场效应敏感器件 |
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| 引用本文： | 付庭治,黄德培,朱春生,欧惠春,陆筱旖,胡进,周家蓉,金杰,王金华,张国英. 一种新型的涂丝钙离子场效应敏感器件[J]. 高等学校化学学报, 1986, 7(10): 923 |
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| 作者姓名： | 付庭治 黄德培 朱春生 欧惠春 陆筱旖 胡进 周家蓉 金杰 王金华 张国英 |
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| 作者单位： | 1. 南京大学生物系、化学系;2. 太仓晶体管厂;3. 太和人民医院;4. 太仓电视机厂 |
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| 摘 要： | 从1970年以来,不少学者对场效应敏感器件(简称ISFET)做了研究[1-4],本文作者利用二-(二异辛基苯基磷酸)钙为电活性物质研制成Ca2+-ISFET,并测定了器件的各项性能参数。
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| 收稿时间： | 1985-04-02 |
A New Goated Wire Ca2+-Ion Sensitive Field-Effect Transistor |
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| Fu Tingzhi,Huang Depei,Zhu Chunsheng,Ou Huichun,Lu Yuyi,Hu Jin,Zhou Jiarong,Jin Jie,Wang Jinhua,Zhang Guoying. A New Goated Wire Ca2+-Ion Sensitive Field-Effect Transistor[J]. Chemical Research In Chinese Universities, 1986, 7(10): 923 |
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| Authors: | Fu Tingzhi Huang Depei Zhu Chunsheng Ou Huichun Lu Yuyi Hu Jin Zhou Jiarong Jin Jie Wang Jinhua Zhang Guoying |
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| Affiliation: | 1. Department of Biology and Department of Chemistry, Nanjing University Nanjing;2. Taicang Trasisters Factory, Nanjing;3. Taihe People's Hospital;4. Taicang Television Set Factory, Nanjing |
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| Abstract: | The authors of this paper have developed a Ca2+-ISFETby dissolving just the right amount of calcium bis-(bis-octylbenzene phosphate)with PVCin a tetrahy-drofuran solution,which was coated on platihun-wire(1.8cm long and φ0.4m/m)after adding to it a plasticizer. |
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