首页 | 本学科首页   官方微博 | 高级检索  
     


Photophysics of aminobenzazole dyes in silica-based hybrid materials
Authors:Silvia Regina Grando  Fabiano da Silveira Santos  Márcia Russman Gallas  Tania Maria Haas Costa  Edilson Valmir Benvenutti  Fabiano Severo Rodembusch
Affiliation:1. LSS??Laborat??rio de S??lidos e Superf??cies, Universidade Federal do Rio Grande do Sul, Avenida Bento Gon?alves, 9500, CP 15003, Porto Alegre-RS, CEP 91501-970, Brazil
2. LNMO??Laborat??rio de Novos Materiais Organicos, Universidade Federal do Rio Grande do Sul, Avenida Bento Gon?alves, 9500, CP 15003, Porto Alegre-RS, CEP 91501-970, Brazil
3. LAPMA??Laborat??rio de Altas Press?es e Materiais Avan?ados, Universidade Federal do Rio Grande do Sul, Avenida Bento Gon?alves, 9500, CP 15003, Porto Alegre-RS, CEP 91501-970, Brazil
Abstract:In this work two aminobenzazole derivatives (5-AHBT and 5-AHBI) were dispersed in silica-based hybrid materials with different surface hydrophobicity, which were obtained by the sol?Cgel process using tetraethylorthosilicate as inorganic precursor and dimethyldimethoxysilane as organic precursor, with a molar percent of organic precursor changing from 0 to 50%. The photophysics of the obtained doped silica hybrid materials was investigated by means ultraviolet?Cvisible diffuse reflectance and steady-state fluorescence emission spectroscopy in the solid state. The materials present absorption maxima located around 353 and 318?nm when doped with 5-AHBT and 5-AHBI, respectively. The red shifted absorption maxima of the 5-AHBT can be explained by the better electron delocalization allowed by the sulfur atom in relation to the nitrogen. The fluorescence emission spectra are located in the blue-green regions and the high Stokes shift indicates that the ESIPT mechanism occurs in the excited state for both dyes. The photophysical behavior of 5-AHBT shows that this dye is more affected by the matrix polarity due to specific interactions that take place in the ground state.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号