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Field emission from quantum size GaN structures |
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| Authors: | O Yilmazoglu D Pavlidis Yu M Litvin S Hubbard I M Tiginyanu K Mutamba H L Hartnagel V G Litovchenko A Evtukh |
| Institution: | a Institut für Hochfrequenztechnik, Technische Universität Darmstadt, Merckstr. 25, Darmstadt 64283, Germany b Department of Electrical Engineering and Computer Science, The University of Michigan, 2307 EECS Building, 1301 Beal Avenue, Ann Arbor, MI 48109-2122, USA c Institute of Semiconductor Physics, 45 Prospekt Nauki, Kiev 03028, Ukraine |
| Abstract: | Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×1017 or 3×1018 cm?3) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I–V curves. |
| Keywords: | GaN field emitter Quantum size |
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