Mechanism of formation of highly conductive layer on ZnO crystal surface |
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| Authors: | I.V. Markevich V.I. Kushnirenko L.V. Borkovska B.M. Bulakh |
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| Affiliation: | V. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, 03028 Kyiv, Ukraine |
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| Abstract: | The mechanism of formation of a thin highly conductive layer, which is known to be present on ZnO surface, has been proposed. This process has been assumed to consist in accumulation of mobile shallow donors at crystal surface due to their drift in band-bending electric field caused by adsorbed oxygen. Experimental results that confirm this mechanism have been obtained. |
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| Keywords: | 61.72.Ji 66.30.&minus h 73.25.+i |
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