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Self-assembly formation of the ordered nanostructure arrays induced by Be interaction with Si(1 1 1) surface |
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| Authors: | AA Saranin AV Zotov VG Kotlyar OA Utas M Katayama K Oura |
| Institution: | a Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Yamada-oka 2-1, Osaka 565-0871, Japan b Institute of Automation and Control Processes, 690041 Vladivostok, Russia c Faculty of Physics and Engineering, Far Eastern National University, 690000 Vladivostok, Russia d Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia e Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan |
| Abstract: | Formation of the beryllium (Be) submonolayers on the Si(1 1 1)7 × 7 surface has been studied using scanning tunneling microscopy. It has been found that Be interaction with Si(1 1 1) at 500-700 °C results in a self-assembly formation of the four various types of the highly-ordered nanostructure arrays. The nanostructure arrays develop on top of the “soft” silicide layer, which period and orientation alter with the nanostructure growth: the shorter the nanostructure period, the larger the rotation angle. The main structural parameters of the silicide layer and nanostructure arrays have been established. |
| Keywords: | Atom-solid interactions Silicon Beryllium Surface structure morphology roughness and topography Scanning tunneling microscopy |
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