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Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy |
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| Authors: | P Specht JC Ho X Xu R Armitage ER Weber R Erni C Kisielowski |
| Institution: | a Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, One Cyclotron Road, Berkeley, CA 94720, USA b Materials Science and Engineering Department, University of California, Berkeley, CA 94720, USA c Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA d National Center for Electron Microscopy, LBNL, One Cyclotron Road, Berkeley, CA, USA |
| Abstract: | Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7±0.2 eV) and for wurtzite GaN at (3.3±0.2 eV) that are ascribed to the fundamental bandgap. Additional band transitions could be identified at higher and lower energy losses. The latter may be related to transitions involving defect bands. In InN, neither oxygen related crystal phases nor indium metal clusters were observed in the areas of the epilayers investigated by VEELS. Consequently, the obtained results mainly describe the properties of the InN host crystal. |
| Keywords: | 71 20 Nr 71 55 Eq |
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