|
|||||
|
|
Modification of the charge ordering transition in the quasi-one-dimensional conductor (TMTTF)2SbF6 under pressure |
|
| Authors: | M Nagasawa F Nad P Monceau J-M Fabre |
| Institution: | a Department of Natural Sciences and Department of Material Science, Tokyo Denki University, Nishikicyo 2-2, Kanda, Chiyoda, 101-8457 Tokyo, Japan b Centre de Recherches sur les Très Basses Températures, CNRS, 25 rue des Martyrs, BP 166, 38042 Grenoble cedex 9, France c Institute of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia d Laboratoire Léon Brillouin, Unité Mixte de Recherche, CEA-CNRS, CEA Saclay, 91191 Gif-sur-Yvette cedex, France e Laboratoire de Chimie Structurale Organique, Université de Montpellier, 34095 Montpellier cedex 5, France |
| Abstract: | We have measured the temperature dependences of the conductance G and the dielectric permittivity ε′ of the (TMTTF)2SbF6 compound under a moderate pressure. The maximum of G(T) associated with the Mott-Hubbard localization disappears under pressure. With increasing pressure the peak in ε′(T), corresponding to the charge ordering (CO) phase transition, shifts to lower temperatures and broadens. At pressures above 0.24 GPa, ε′(T) becomes strongly frequency dependent. These modifications are explained in the frame of the extended Hubbard model and a slowing down behavior. |
| Keywords: | 71 30 +h 71 27 +a 71 45 Lr 77 80 Bh |
| 本文献已被 ScienceDirect 等数据库收录！ | |