Self-aligned silicon quantum wires on Ag(1 1 0) |
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Authors: | C. Leandri,B. Aufray,C. Girardeaux,M.E. Dá vila,C. Ottaviani |
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Affiliation: | a CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France b L2MP, Campus de Saint Jérôme, 13397 Marseille Cedex 20, France c Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Cantoblanco, Madrid, Spain d LURE, Bât. 209 D, Université Paris-Sud, BP 34, 91898 Orsay, France e Instituto di Struttura della Materia, CNR, Via Fosso del Cavaliere, 00133 Rome, Italy |
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Abstract: | Upon deposition of silicon onto the (1 1 0) surface of a silver crystal we have grown massively parallel one-dimensional Si nanowires. They are imaged in scanning tunnelling microscopy as straight, high aspect ratio, nanostructures, all with the same characteristic width of 16 Å, perfectly aligned along the atomic troughs of the bare surface. Low energy electron diffraction confirms the massively parallel assembly of these self-organized nanowires. Photoemission reveals striking quantized states dispersing only along the length of the nanowires, and extremely sharp, two-components, Si 2p core levels. This demonstrates that in the large ensemble each individual nanowire is a well-defined quantum object comprising only two distinct silicon atomic environments. We suggest that this self-assembled array of highly perfect Si nanowires provides a simple, atomically precise, novel template that may impact a wide range of applications. |
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Keywords: | Silver Silicon Self-assembly Nanowires Scanning tunneling microscropy Photoelectron spectroscopy |
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