脉冲激光沉积方法制备ZnO薄膜生长参量对发光特性的影响

用脉冲激光沉积（PLD）方法在Si（111）衬底上制备了ZnO薄膜。以325nmHe-Cd激光器为光源对薄膜进行了荧光光谱分析，用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的结构和形貌进行了分析。脉冲激光沉积方法的主要生长参量为氧压、激光重复频率、生长温度和激光能量。通过控制这些参量变量，研究了这些参量对ZnO薄膜发光特性的影响，得到了用于紫外发光的ZnO薄膜生长的优化条件：发现在温度为650℃左右、氧压50Pa左右、频率5Hz左右的范围内能得到半峰全宽较窄，强度较大的紫外发光峰。分析认为紫外峰主要是由激子辐射复合发光形成的，绿光带主要和Ozn的存在密切相关，氧空位是蓝光发射的重要原因。

Effect of Growth Parameters of Fabricating ZnO Thin Films by Pulsed Laser Deposition on Light Emission Characteristics

ZnO thin films were grown on Si(111) substrates by pulsed laser deposition (PLD). The optical properties of the films were studied by photoluminescence (PL) spectra using a 325 nm He-Cd laser. The structural and morphological properties of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements, respectively. Through controlling those growth paramters, oxygen pressure, laser repetition rate, growth temperature and laser intensity, their influence on the characteristics of light emission of the ZnO thin films was studied. The optimized parameters were obtained. ZnO films with narrow full width at half maximum (FWHM) and strong ultraviolet (UV) PL peaks were acquired under conditions of about 650 ℃, 50 Pa and 5 Hz. Further more, it was suggested that UV PL peaks were due to excitonics combination, the green bands were due to the replacing of Zn in the crystal lattice for O and the blue bands were due to the O vacancies.