Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir |
| |
| Authors: | V A Kul’bachinskii A Yu Kaminskii N Miyajima M Sasaki H Negishi M Inoue H Kadomatsu |
| |
| Institution: | (1) M. V. Lomonosov Moscow State University, 119899 Moscow, Russia;(2) Graduate School of Advanced Sciences of Matter, Hiroshima University, 739-8526 Higashi-Hiroshima, Japan |
| |
| Abstract: | The quantization of the Hall resistivity ρxy in the form of plateaus in the dependence of ρxy on the magnetic field B is observed in the semiconductors Bi2Te3 and Sb2Te3; the minima of the transverse magnetoresistivity ρxx correspond to the start of the plateaus. The quantization of ρxy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band
with a much higher current-carrier effective mass serves as the reservoir.
Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 754–758 (10 December 1999) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
