The magnetic mechanism of Zn0.93Co0.07O thin films |
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| Authors: | XiaoJuan Ye DengLu Hou Wei Zhong ChakTong Au YouWei Du |
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| Affiliation: | (1) Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, China;(2) Department of Physics, Hebei Normal University, Shijiazhuang, 050016, China;(3) Department of Chemistry, Hong Kong Baptist University, Hong Kong, China |
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| Abstract: | Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons. Supported by the National Natural Science Foundation of China (Grant No. 10674059) and the Major Project of National Basic Research Program of China (Grant No. 2005CB623605) |
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| Keywords: | ZnO-based diluted magnetic semiconductor thin film ferromagnetism |
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