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Adsorption-induced magnetism properties in graphene
Authors:Li Chen  Yu OuyangHongzhe Pan  Yuanyuan SunDaoyong Li
Affiliation:a Department of Physics, Linyi Normal University, Linyi, Shandong 276005, People’s Republic of China
b Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, USA
Abstract:Using first-principles calculations, we investigate magnetic properties and electronic structures of graphene with H, N and P adsorptions. With a change in adsorption density from 1/50 to 1/162 a band gap changing from ∼1.2 to 0.1 eV emerges in a H-absorbed graphene, leading to the semiconducting graphene and showing ferromagnetism with the magnetic moment of the system changing from 0.76 to 0.42μB. The unpaired electrons in the absorbed N/P atoms are polarized and thus it exhibits magnetic moment per N/P atom changing from 0.38/0.20 to 0.60/0.14μB and metallic and half-metallic magnetism, respectively. The spin-polarized graphene system has a great application prospect in spintronics.
Keywords:Graphene   Adsorption   Magnetism   Electronic structure
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