Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: A new materials for spintronics |
| |
Authors: | LI Koroleva DM ZashchirinskiiTM Khapaeva AI MorozovSF Marenkin IV FedorchenkoR Szymczak |
| |
Institution: | a M.V. Lomonosov Moscow State University, Leninskie Gory, 119992 Moscow, Russia b Institute of General and Inorganic Chemistry RAS, Leninskii pr. 31, 119991 Moscow, Russia c Institute of Physics PAS, Lotnicov al. 32/46, Warsaw 02668, Poland |
| |
Abstract: | Based on Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2 the new dilute magnetic semiconductors with p-type conductivity were produced. Magnetization, electrical resistivity, magnetoresistance and Hall effect of mentioned compositions were studied. Their curves of temperature dependence of magnetization have the similar form in spite of complicated character, for which the concentration and mobility of the charge carriers are responsible. Thus, for T<15 K, these curves are characteristic for superparamagnetics and for T>15 K for a frustrated ferromagnetics. In compounds with Zn these two states dilute by spinglass-like state. This specific feature is assigned to an attraction of Mn ions occupying neighboring sites and to the competition between the carrier-mediated exchange and superexchange interactions. Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems. |
| |
Keywords: | Magnetism Spintronics Chalcopyrite |
本文献已被 ScienceDirect 等数据库收录! |
|