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Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots |
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| Authors: | EA Zibik AD Andreev LR Wilson MJ Steer RP Green WH Ng JW Cockburn MS Skolnick M Hopkinson |
| Institution: | aDepartment of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH, UK;bDepartment of Physics, University of Surrey, Guildford GU2 7XH, UK;cEPSRC National Centre for III-V Technology, Sheffield S1 3JD, UK |
| Abstract: | We present a comprehensive study of the intraband transitions in n-type InAs/GaAs quantum dots (QDs) with a filling varying from 0.5 to 4 electrons per dot, using both polarization-dependent absorption and photocurrent spectroscopy. Applying these complementary mid- and far-infrared spectroscopies over a wide energy range allows us to obtain a detailed picture of the intraband transitions and energy levels in self-assembled QDs. |
| Keywords: | Quantum dots Intersublevel transitions Mid-IR absorption |
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