| 半导体硅上电沉积Cu/Co层状薄膜 |
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| 引用本文： | 刘冰,龚正烈,姚素薇,郭鹤桐,袁华堂,张允什. 半导体硅上电沉积Cu/Co层状薄膜[J]. 物理化学学报, 1999, 15(4): 356-360. DOI: 10.3866/PKU.WHXB19990413 |
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| 作者姓名： | 刘冰 龚正烈 姚素薇 郭鹤桐 袁华堂 张允什 |
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| 作者单位： | Institute of New Energy Material Chemistry,Nankai University,Tianjin 300071,Deparmemt of Physics,Tianjin Institute of Technology,300191,Department od Applied Chemistry,Tianjin University,Tianjin 300072 |
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| 摘 要： | 由磁性层和非磁性层组成的人工调制层状结构多层膜，其物性和磁性都表现出与其它结构的多层膜显著不同的特点，如巨磁阻效应［’，‘l、易磁性方向的改变等”］．其性能的研究不但在磁性理论上具有重大意义，而且有望应用于高性能的磁阻敏感设备及提高磁记录密度等．因而近年来有关这方面的研究越来越引起人们的重视．目前，磁性多层膜的制备主要采用气相沉积、磁控溅射、分子束外延等真空技术．由于电沉积技术具有设备简单、操作方便等特点而成为制备多层膜的颇具活力的工艺．CO／Cll多层膜在C。层厚度较薄时具有较高室温巨磁阻（GMR）…
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| 关 键 词： | p-Si 电沉积 Cu/Co层状膜 |
| 收稿时间： | 1998-06-04 |
| 修稿时间： | 1998-09-01 |
Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon |
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| Liu Bing,Gong Zhenglie,Yao Suwei,Guo Hetong,Yuan Huatang,Zhang Yunshi. Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon[J]. Acta Physico-Chimica Sinica, 1999, 15(4): 356-360. DOI: 10.3866/PKU.WHXB19990413 |
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| Authors: | Liu Bing Gong Zhenglie Yao Suwei Guo Hetong Yuan Huatang Zhang Yunshi |
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| Affiliation: | Institute of New Energy Material Chemistry,Nankai University,Tianjin 300071|Deparmemt of Physics,Tianjin Institute of Technology,300191|Department od Applied Chemistry,Tianjin University,Tianjin 300072 |
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| Abstract: | The Cu/Co layer film on the sendconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension poth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shaPe of current-timetransient curves of the deposition of Co at higher deposition potelltials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3' YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co. |
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| Keywords: | p-Si Electrodeposition Cu/Co layer film |
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