MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p-InGaAs layers |
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| Authors: | A. Eisenbach A. Goldhorn E. Kuphal K. Mause |
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| Affiliation: | Deutsche Telekom AG, Research Center, Am Kavalleriesand 3, D-64295, Darmstadt, Germany |
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| Abstract: | Technological problems, requirements, and solutions for a PIN-HBT photoreceiver are investigated. MOVPE growth of the different layer structures for PIN-diodes and SHBTs require compromises to obtain the best performances of the devices within the integrated circuit. Growth and device technology are investigated and solutions for the integration are given using LP-MOVPE for growing the epitaxial layers for PIN-diodes and HBTs, respectively. |
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