Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures

The specific features of the dislocation motion in dislocation-free silicon wafers (single crystals are grown by the Czochralski method) heat-treated at 450 and 650°C have been investigated. It is found that the low-temperature treatment of silicon wafers with an oxygen content of (7–8)×10¹⁷ cm^?3 substantially affects the dynamic properties of dislocations generated into silicon wafers during their four-point bending and brings about an increase in the starting stresses of the onset of the dislocation motion. A characteristic spatial inhomogeneity is observed in the generation and propagation of dislocations from indentations upon the bending of heat-treated wafers. The reasons for the regularities revealed are discussed.