Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve |
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| Authors: | Jiang Y Abe S Ochiai T Nozaki T Hirohata A Tezuka N Inomata K |
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| Institution: | Department of Materials Science, Graduate School of Engineering, Tohoku University, and CREST, Japan Science and Technology Agency, Sendai 980-8579, Japan. elejyong@hotmail.com |
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| Abstract: | Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this Letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases. |
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