| Calculation of LET in SEE simulation by pulsed laser |
| |
| 作者姓名： | HUANG Jianguo & HAN Jianwei Center for Space Science and Applied Research Chinese Academy of Sciences Beijing China |
| |
| 作者单位： | HUANG Jianguo & HAN Jianwei Center for Space Science and Applied Research，Chinese Academy of Sciences，Beijing 100080，China |
| |
| 基金项目： | 中国科学院科技攻关项目 |
| |
| 摘 要： | A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.
|
| 收稿时间： | 16 September 2004 |
Calculation of LET in SEE simulation by pulsed laser |
| |
| HUANG Jianguo & HAN Jianwei Center for Space Science and Applied Research,Chinese Academy of Sciences,Beijing ,China.Calculation of LET in SEE simulation by pulsed laser[J].Science in China(Physics Astronomy),2005,48(1):113-121. |
| |
| Authors: | HUANG Jianguo HAN Jianwei |
| |
| Institution: | Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100080, China |
| |
| Abstract: | A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions. |
| |
| Keywords: | SEE pulsed laser equivalent LET device |
| 本文献已被 CNKI 万方数据 SpringerLink 等数据库收录！ |
