| 基于多种添加剂的TSV镀铜工艺研究 |
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| 引用本文： | 魏红军,师开鹏.基于多种添加剂的TSV镀铜工艺研究[J].电子工艺技术,2014(4):239-241. |
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| 作者姓名： | 魏红军 师开鹏 |
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| 作者单位： | 中国电子科技集团公司第二研究所,山西太原030024 |
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| 摘 要： | 穿透硅通孔技术(TSV)是3D集成电路中芯片实现互连的一种新的技术解决方案,是半导体集成电路产业迈向3D封装时代的关键技术。在TSV制作主要工艺流程中,电镀铜填充是其中重要的一环。基于COMSOL Multiphysics平台,建立了考虑加速剂和抑制剂作用的硅通孔电镀铜仿真模型,仿真研究得到了基于硫酸铜工艺的最优电镀药水配方,并实验验证了该配方的准确性。
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| 关 键 词： | TSV 电镀 铜填充 D封装 |
Numerical study of TSV Copper Deposition with Multi-additives |
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| WEI Hong-jun,SHI Kai-peng.Numerical study of TSV Copper Deposition with Multi-additives[J].Electronics Process Technology,2014(4):239-241. |
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| Authors: | WEI Hong-jun SHI Kai-peng |
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| Institution: | ( The 2nd Research Institute of CETC, Taiyuan 030024, China ) |
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| Abstract: | As a new technology in chip interconnection, TSV is the key technology toward 3D packaging for semiconductor integrated circuit. During the TSV process, copper deposition is one of the important technological steps. A numerical model of TSV deposition with multi-additives is developed and the concentration of accelerator and suppressor is also optimized based on the COMSOL Multiphsics platform. The optimal concentration of accelerator and suppressor is vivificated by experiment. |
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| Keywords: | TSV Electric plating Copper filling 3D packaging |
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