首页 | 本学科首页   官方微博 | 高级检索  
     检索      

短波红外探测器的发展与应用(特邀)
引用本文:马旭,李云雪,黄润宇,叶海峰,侯泽鹏,史衍丽.短波红外探测器的发展与应用(特邀)[J].红外与激光工程,2022,51(1):20210897-1-20210897-12.
作者姓名:马旭  李云雪  黄润宇  叶海峰  侯泽鹏  史衍丽
作者单位:1.云南大学 物理与天文学院,云南 昆明 650091
基金项目:云南省重大科技专项(2018 ZI002)
摘    要:短波红外波段作为“大气透过窗口”之一,探测器工作在该波段能获得目标更多的辐射能量。另外,短波红外对近室温目标的探测成像类似于可见光的反射式成像,一方面拥有中长波红外探测缺少的细节分辨能力,另一方面具有穿透烟雾进行成像等可见光探测不具备的能力。随着短波红外探测器在军事、民用领域的广泛应用,对短波红外探测器的性能、成本提出了更高的要求,InGaAs探测器由于高达约70%~90%的量子效率、室温下约8000 cm2/(V·s)的高迁移率,以及高灵敏度、高速响应、低成本的应用优势,是目前短波红外探测器的最佳选择。为了进一步扩展波长、提高分辨率、降低成本,发展了基于II类超晶格、胶体量子点、硅基材料等新材料和新工艺的短波红外探测器。文中对美国、法国、以色列、中国等国内外短波红外探测器的发展现状进行了归纳整理,对有关短波红外探测器的新材料和新工艺进行了报道,最后探讨分析了短波红外探测器的未来发展趋势。

关 键 词:短波红外    红外探测器    InGaAs    胶体量子点    II类超晶格    硅基短波红外探测器
收稿时间:2021-11-25

Development and application of short wavelength infrared detectors (Invited)
Ma Xu,Li Yunxue,Huang Runyu,Ye Haifeng,Hou Zepeng,Shi Yanli.Development and application of short wavelength infrared detectors (Invited)[J].Infrared and Laser Engineering,2022,51(1):20210897-1-20210897-12.
Authors:Ma Xu  Li Yunxue  Huang Runyu  Ye Haifeng  Hou Zepeng  Shi Yanli
Institution:1.School of Physics and Astronomy, Yunnan University, Kunming 650091, China2.Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China
Abstract:Short wavelength infrared band (SWIR) as one of the "atmospheric windows", the detectors working in this wavelength range can receive more radiation energy from the target and gain higher sensitivity. In addition, SWIR detecting and imaging is based on the reflection imaging from the target similar to visible light, consequently it is typical of the distinct details resolution ability that medium and long wavelength infrared imaging lacks. With the wide application of SWIR detectors in military and civil area, higher requirements are put forward on the both performance and cost of SWIR detectors. InGaAs detectors is one of best choice as SWIR detectors since it has high sensitivity, high-speed response and low cost due to its quantum efficiency up to 70%-90% and high mobility close to 8000 cm2/(V·s) at room temperature. However, in order to further expand the wavelength, improve the imaging resolution, and reduce the cost, SWIR detectors based on new materials and new mechnism such as type-II superlattices, colloidal quantum dots and Si-based materials have been developed. This paper firstly summarized the advancement of InGaAs SWIR detectors from the main foreign and domestic research institutions including Sensors Unlimited Incorporation (SUI), FLIR, Teledyne Technologies, Teledyne Princeton Instruments of the United States, Sofradir and New Imaging Technologies (NIT) of France, Semiconductor Device (SCD) of Israel, Xenics of Belgium, etc. Then the new materials and new technology of SWIR detectors were introduced. Finally, the further development trendency of SWIR detectors was proposed.
Keywords:
本文献已被 万方数据 等数据库收录!
点击此处可从《红外与激光工程》浏览原始摘要信息
点击此处可从《红外与激光工程》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号