Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.