Direct measurement of surface complex loading and surface dipole and their effect on simple device behavior

Tin complexes of phenoxide ligands having a range of dipole moments were prepared on the surface of indium-tin oxide (ITO). Surface complex loadings and stoichiometries were measured by quartz crystal microgravimetry. Work functions of ITO substrates treated with these various surface complexes were measured using a Kelvin probe. Surface complex dipole moments were then calculated based on measured surface loadings. Changes in the ITO work function effected by surface phenoxide complex introduction correlate with these surface complex dipole moments and with total surface dipole per unit area, and current densities in simple hole-only diode devices also correlate with these total surface dipoles.