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Morphology changes due to AC induced electromigration in Gd islands on W(1 1 0) |
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| Authors: | H Realpe N Shamir MH Mintz Y Manassen |
| Institution: | a Department of Physics and the Ilse Katz Center of Science and Technology in the nm Scale, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84104, Israel b Nuclear Research Center - Negev, P.O. Box 9001, Beer Sheva 84190, Israel c Department of Nuclear Engineering, Ben Gurion University of the Negev, P.O. Box 653, Beer Sheva 84104, Israel |
| Abstract: | Gd islands were grown on W(1 1 0) surface by evaporating Gd on the substrate at room temperature and subsequent annealing. STM images reveal in many cases islands which have a deep hole inside them. The appearance of the hole is associated with the application of an AC field. No such holes appear when the sample is heated by a DC current. We show that this can be explained by the combined affect of the AC field and the barrier to diffusion introduced by steps that can create a nucleus for further growth of an island which includes a hole in the middle. This may be generalized to a technique of tailoring the size, shape and distances of islands by, for example, two orthogonal AC fields with a phase delay of 90° between them. |
| Keywords: | Gadolinium Scanning tunneling microscopy Surface thermodynamics Surface morphology |
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