Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE |
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Authors: | J Werner K Lyutovich E Kasper C Teichert |
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Institution: | a Universität Stuttgart, Institut für Halbleitertechnik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany b Institute of Physics, Montanuniversität Leoben, Franz Josef Str. 18, A-8700 Leoben, Austria |
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Abstract: | Fabrication of device structures based on laterally self-ordered systems without the use of expensive and time-consuming nanolithography could have undoubted advantages. For such applications, it is proposed to use misfit dislocation networks from partially relaxed SiGe layers on (1 0 0) Si substrate as a template for the growth of highly ordered SiGe islands. Ion bombardment during molecular beam epitaxy of metastable SiGe layers leads to such a partial relaxation by misfit dislocation networks. The ions are generated by the interaction of the evaporated Si flux with the electrons in an electron beam evaporator, which causes a partial ionization of Si atoms in the molecular beam. We demonstrate by atomic force microscopy that subsequent growth of SiGe on such relaxed SiGe (25-50% Ge) layers leads to the formation of uniform three-dimensional islands highly ordered in 〈1 1 0〉 directions. |
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Keywords: | Ion-assisted MBE Misfit dislocations Self-organisation |
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