Structural and morphological characterisation of hybrid Cu/Si(0 0 1) structures |
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Authors: | C.A.F. Vaz S.J. Steinmuller J.A.C. Bland |
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Affiliation: | a Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK b Clarendon Laboratory, Oxford University, Oxford OX1 3PU, UK |
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Abstract: | The structural and morphological properties of epitaxial Cu/Si(0 0 1) type of structures have been investigated by a combination of electron, X-ray and scanning probe imaging techniques. Auger electron spectroscopy measurements indicate the presence of Si in the Cu layer for Cu thicknesses up to 10 nm. In addition, X-ray scattering results show that there is a mosaic spread in the Cu(0 0 1) crystal which decreases as the Cu thickness increases, from 8° at 15 nm to 4.5° at 100 nm. This behaviour is corroborated by reflection high energy electron diffraction patterns of the Cu surface measured during growth, which exhibit a twinning in the diffraction spots for the 15 and 30 nm Cu films. Atomic force and scanning electron microscopy imaging of Cu(4 nm)/Co(7,17 nm)/Cu(100 nm)/Si(0 0 1) structures allow one to visualise and characterise the sample surface in real space; from these measurements, an average roughness amplitude of ∼0.5 nm and a correlation length of ∼50 nm are obtained. Our results provide a better understanding of an important system which has been widely used as a template for the growth of epitaxial ultrathin magnetic films. |
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Keywords: | Cu/Si interface Fcc Co X-ray scattering Surface roughness |
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