Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1) |
| |
Authors: | Brad P. Tinkham Wolfgang Braun Vladimir M. Kaganer Dillip K. Satapathy Bernd Jenichen Klaus H. Ploog |
| |
Affiliation: | Paul-Drude Institute for Solid State Electronics, Berlin, Germany |
| |
Abstract: | Using a combination of molecular beam epitaxy and in situ surface X-ray diffraction, we investigate the nucleation and coarsening of monolayer high islands on GaSb(0 0 1) during deposition in real time. We find an activation energy for island nucleation of 1.55 ± 0.16 eV, indicating a stable nucleus size larger than two atoms. For intermediate temperatures where GaSb homoepitaxy is stable, the lateral coarsening of the islands after deposition is described by Ostwald ripening. The average island sizes during coarsening are isotropic, although with different size distributions in different directions. The size distributions do not change during coarsening, implying kinetic scaling. |
| |
Keywords: | X-ray scattering, diffraction, and reflection Molecular beam epitaxy Nucleation Growth Gallium antimonide |
本文献已被 ScienceDirect 等数据库收录! |
|