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Synthesis, morphology and random laser action of ZnO nanostructures |
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| Authors: | L. Miao Y. Ieda Y. Hayashi S.P. Lau Y.G. Cao |
| Affiliation: | a Department of Environmental Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan b Materials R&D Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan c School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, 639798 Singapore, Singapore d Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, PR China |
| Abstract: | Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2 in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing. |
| Keywords: | S.3. Evaporation and sublimation M.1. Zinc oxide M.2. Nanostructure M.3. Semiconducting surfaces Random lasing |
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