Surface reconstructions on InN and GaN polar and nonpolar surfaces |
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Authors: | David Segev |
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Affiliation: | Materials Department, University of California, Santa Barbara, CA 93106, USA |
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Abstract: | We report a systematic and comprehensive computational study of surface reconstructions on GaN and InN surfaces in various orientations, including the polar c plane as well as the nonpolar a and m planes. For GaN we have identified several new metallic reconstructions under highly Ga-rich conditions on the nonpolar planes. For InN we find several distinct differences from the GaN case: the absence of a nitrogen-adatom reconstruction on the (0 0 0 1) plane; the presence of a single, metallic reconstruction over the entire stability range on the plane; and In-adlayer reconstructions on the (m) plane. An interesting “inverted polarity” defect structure on the (m) plane is also revealed. |
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Keywords: | Density functional calculations Energetics Reconstruction Surface energy Gallium nitride Indium nitride Surface defects |
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