钛酸锶钡材料应用于超高密度动态随机存储器的研究

铁电钛酸锶钡材料具有十分优越的介电性能 :高的介电常数 ,较低的介电损耗 ,好的绝缘漏电性能 ;而且 ,通过调节材料中的Ba/Sr成分比 ,可改变材料的居里相变温度TC,以满足特定应用环境的温度需要 ,在超高密度集成的动态随机存储器 (DRAM)方面表现出广阔的应用前景 .文章概括介绍了BaxSr1-xTiO3 薄膜材料在DRAM应用中已取得的最新研究进展 ,并对这一应用所面临的问题也进行了详细讨论

BaxSr1-xTiO3 as an alternative dielectric to SiO2 for high-density DRAMs

Ferroelectric Ba xSr 1-xTiO 3 materials have excellent ferroelectric/dielectric properties, i.e. high dielectric constant, relatively low dielectric loss tangent, and fairly low leakage current. The Curie temperature (T C) can be suitably controlled for applications at different ambient temperatures by adjusting the ratio of Ba to Sr. Due to the above characteristics, Ba xSr 1-xTiO 3 thin films show promising applications in high-density dynamic random access devices(DRAMs). The newest research progress in such applications is summarized. Several important problems in this field are also discussed in detail based on the existing research results.