Nanoscale strain engineering of graphene and graphene-based devices |
| |
Authors: | N-C Yeh C-C Hsu M L Teague J-Q Wang D A Boyd C-C Chen |
| |
Institution: | 1. Department of Physics, Institute for Quantum Information and Matter, and Kavli Nanoscience Institute,California Institute of Technology, Pasadena, CA 91125, USA;2. Department of Physics, Fudan University, Shanghai, China;3. Department of Physics, California Institute of Technology, Pasadena, CA 91125, USA |
| |
Abstract: | Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simula-tions and nano-fabrication technology. |
| |
Keywords: | Graphene Strain-engineering Nanostruc-tures Dirac fermions Pseudo-magnetic field Valleytronics |
本文献已被 CNKI 万方数据 SpringerLink 等数据库收录! |
|