First room temperature lasing from the fundamental state of V-grooved quantum wire lasers

Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4–300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.