| 厚层抗蚀剂显影轮廓分析 |
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| 引用本文： | 刘世杰,杜惊雷,肖啸,彭钦军,刘驰,郭永康. 厚层抗蚀剂显影轮廓分析[J]. 光学与光电技术, 2003, 1(4): 43-46 |
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| 作者姓名： | 刘世杰 杜惊雷 肖啸 彭钦军 刘驰 郭永康 |
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| 作者单位： | 1. 四川大学物理学院,成都,610064;陕西理工学院物理系,陕西汉中,723001
2. 四川大学物理学院,成都,610064 |
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| 基金项目： | 国家自然科学基金[60276018] |
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| 摘 要： | DILL上曝光模型和MACK显影模型，编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件，用其分析在理想曝光剂量条件下，抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律，分析得出了给定厚度的抗蚀剂的显影时间，为实验工艺上严格控制显影时间提供依据。
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| 关 键 词： | 厚层抗蚀剂 显影轮廓 线宽 MEMS 接触式曝光系统 光刻 侧壁陡度 微电子机械系统 |
| 文章编号： | 1672-3392(2003)04-43-04 |
| 收稿时间： | 2003-07-11 |
| 修稿时间： | 2003-07-11 |
Analysis of Development Profile of Thick Resists |
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| LIU Shi-jie DU Jing-lei XIAO Xiao PENG Qin-jun LIU Chi GUO Yong-kang. Analysis of Development Profile of Thick Resists[J]. optics&optoelectronic technology, 2003, 1(4): 43-46 |
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| Authors: | LIU Shi-jie DU Jing-lei XIAO Xiao PENG Qin-jun LIU Chi GUO Yong-kang |
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| Abstract: | : During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns. Based on the Dill model and Mack model, this paper work out the lithography simulation software of thick resist, analyze the variation rules of line width and sidewall of developed profile with ideal exposure dose, get the development time of given resist thickness and hope to offer a base to control development time rigorously in the experiment procedure. |
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| Keywords: | MEMS thick resist development profile line width sidewall angle |
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