Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination |
| |
Authors: | KP Ghatak S Bhattacharya S Pahari D De R Benedictus |
| |
Institution: | 1. Department of Electronic Science, The University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700 009, India;2. Nano Scale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012, India;3. Administration Department, Jadavpur University, Kolkata 700 032, India;4. Department of Computer Science and Engineering, West Bengal University of Technology, Kolkata 700 064, India;5. Faculty of Aerospace Engineering, Delft University of Tecnlology, Kluyverweg 1, 2629 HS Delft, The Netherlands |
| |
Abstract: | We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs2, Cd3As2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb1−xSnxSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices. |
| |
Keywords: | Einstein relation n-i-p-i structures Experimental determinations Applications |
本文献已被 ScienceDirect 等数据库收录! |
|