不同脉冲工作条件对GaN HEMT器件结温的影响

研究了不同脉冲工作条件对GaN高电子迁移率晶体管(HEMT)结温的影响,通过改变脉冲信号发生器的输出频率和占空比来改变器件的工作条件,利用具备高空间分辨率的显微红外热像仪进行瞬态结温测试。结果表明:器件工作在给定的平均功率下,可以通过提高脉冲信号占空比和频率来改善器件的寿命和性能可靠性;工作在给定的峰值功率下,可以通过降低脉冲占空比和提高脉冲频率来改善器件的寿命和性能可靠性。沟道温度影响着半导体器件的寿命,因此,可以在器件能够承受的范围内通过改变脉冲占空比和脉冲频率来改善器件的寿命和性能可靠性。

Effects of Different Pulse Operating Conditions on the Junction Temperature of the GaN HEMT

The effects of different pulse operating conditions on the junction temperature of GaN high electron mobility transistors(HEMTs) were analyzed. The operating conditions of the device were changed by changing the output frequency and duty cycle of the pulse signal generator. An infrascope thermal mapper with high spatial resolution was used to test the transient junction temperature. The results show that under a certain average power condition, the lifetime and performance reliability of the device can be improved by increasing the duty cycle and frequency of the pulse signal. When the device operats under a certain peak power condition, the lifetime and performance reliability of the device can be improved by reducing the pulse duty cycle and increasing the pulse frequency. The channel temperature affects the lifetime of the semiconductor device, therefore the lifetime and performance reliability of the device can be improved by varying the pulse duty cycle and pulse frequency within the range that the device can withstand.