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Controlling the electronic structure of SnO2 nanowires by Mo-doping
Authors:Luo Zhi-Hu  Tang Dong-Sheng  Hai Kuo  Yu Fang  Chen Ya-Qi  He Xiong-Wu  Peng Yue-Hu  Yuan Hua-Jun  Yang Yi
Affiliation:Key Laboratory of Low-dimensional Quantum Structures and Quantum Control ofMinistry of Education, College of Physics and Information Science,Hunan Normal University, Changsha 410081, China
Abstract:Mo-doped SnO2 (MTO) nanowires are synthesized by anin-situ doping chemical vapour deposition method. Raman scatteringspectra indicate that the lattice symmetry of MTO nanowires lowerswith the increase of Mo doping, which implies that Mo ions do enterinto the lattice of SnO2 nanowire. Ultraviolet-visible diffusereflectance spectra show that the band gap of MTO nanowiresdecreases with the increase of Mo concentration. Thephotoluminescence emission of SnO2 nanowires around 580~nm atroom temperature can also be controlled accurately by Mo-doping, andit is extremely sensitive to Mo ions and will disappear when theatomic ratio reaches 0.46%.
Keywords:doping   nanostructures   chemical vapor depositionprocesses  semiconducting materials
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