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Terahertz electron transport in a two-dimensional topological insulator in a HgTe quantum well
Authors:Z. D. Kvon  K. M. Dantscher  C. Zoth  D. A. Kozlov  N. N. Mikhailov  S. A. Dvoretsky  S. D. Ganichev
Affiliation:1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
2. Novosibirsk State University, Novosibirsk, 630090, Russia
3. Terahertz Center, University of Regensburg, 93040, Regensburg, Germany
Abstract:The terahertz response of a two-dimensional topological insulator in a HgTe quantum well to radiation with wavelengths of 118 and 184 μm is investigated. It is found that the photoconductivity is rather high (up to a few percent of dark conductivity) and is manifested in both the local and nonlocal responses of the system. This fact proves that the observed photoconductivity is caused by changes in the transport via edge current-carrying states. The sign and nonresonant character of the photoconductivity indicate that it is caused by the heating of electrons in the system. The analysis of experimental results makes it possible to suggest that this heating originates from the Drude absorption of terahertz radiation by metallic “droplets” appearing owing to fluctuations in the impurity potential and the gap and located in direct proximity to edge states.
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