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Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga,In) |
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| Authors: | N. A. Vorobyeva M. N. Rumyantseva R. B. Vasiliev V. F. Kozlovskii Yu. M. Soshnikova D. G. Filatova A. E. Baranchikov V. K. Ivanov A. M. Gaskov |
| Affiliation: | 1. Chemical Faculty, Moscow State University, Vorob’evy gory, Moscow, 119991, Russia 2. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia 3. National Research Tomsk State University, pr. Lenina 36, Tomsk, 634050, Russia |
| Abstract: | Films of undoped ZnO and zinc oxide doped with gallium and indium (ZnO(Ga) and ZnO(In)) have been prepared by the spin-coating method with the subsequent annealing at 500°C. Phase composition, microstructure, conductivity, and optical properties of the films have been investigated depending on the content of gallium and indium in them. |
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