Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers |
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| Institution: | 1. Interuniversity Micro Electronics Center (IMEC), Kapeldreef 75, B-3001 Leuven, Belgium;2. Dept. of Chemistry, Katholieke Universiteit Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium;3. GroepT, Vesaliusstraat 13, B-3000 Leuven, Belgium;4. Umicore, EOM, Watertorenstraat 33, B-2250 Olen, Belgium;1. Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands;2. Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil;1. Department of Computer Science and Communication Engineering, Providence University, Taichung, Taiwan;2. Department of Computer Science and Information Engineering, Chang Gung University, Taoyuan, Taiwan;3. Department of Computer Science and Information Management, Providence University, Taichung, Taiwan;1. Electronic Systems Lab., Royal Institute of Technology (KTH), SE-10044 Stockholm, Sweden;2. Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre-lès-Nancy, France;3. University of Rennes, 1/IRISA/INRIA, CAIRN Res. Team, 6 rue de Kérampont, F-22300 Lannion, France;4. École Polytechnique de l’Université de Nantes, Département Électronique et Technologies Numériques, 44306 Nantes, France;1. Eindhoven University of Technology, The Netherlands;2. Czech Technical University in Prague, Czech Republic;1. Department of Electronics and Microelectronics, University of Mons, Boulevard Dolez 31, 7000 Mons, Belgium;2. Computer Science Laboratory Gaspard-Monge, ESIEE Paris, University Paris-Est, 93162 Noisy-le-Grand Cedex, France |
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| Abstract: | Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry (VPD–DC–TXRF) for metallic contamination analysis towards Ge substrates. A first step that asked for adaptation was the collection chemistry as the Ge wafers surface is not hydrophobic after the VPD treatment. The contact angle could be significantly increased using a concentrated HCl solution. This chemistry has been proved to perform well in the collection of metals from intentionally contaminated Ge wafers. A second step that needed optimization was the matrix removal method as a sample preparation step prior to the TXRF analysis. First, the upper limits of TXRF on Ge containing solutions have been characterized. The accuracy of TXRF is found to be acceptable for Ge contents lower than 1×1014 atoms (250 ppb in 50 μL) but decreases systematically with higher Ge contents. Fortunately, Ge can be volatilized at low temperatures as GeCl4 by the addition of HCl. The parameters within this method have been investigated with respect to the removal of Ge and the recovery of metal traces. Finally, the full VPD–DC–TXRF method has been applied on intentionally contaminated Ge wafers and proved to be very accurate. |
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