Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer |
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| Institution: | 1. School of Marine Engineering Equipment, Zhejiang Ocean University, Zhoushan 316022, China;2. National Engineering Research Center for Marine Aquaculture, Zhejiang Ocean University, Zhoushan 316022, China;3. School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China;1. National Engineering Research Center for Marine Aquaculture, Institute of Innovation & Application, Zhejiang Ocean University, Zhoushan 316022, China;2. State Key Laboratory of Southwestern Chinese Medicine Resources, School of Pharmacy, Chengdu University of Traditional Chinese Medicine, Chengdu 611137, China;3. Department of Chemical Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON N2L3G1, Canada;4. Macau Centre for Research and Development in Chinese Medicine, Institute of Chinese Medical Sciences, University of Macau, Macao 999078, China;1. Laboratory of Optoelectronic Materials and Devices, Key Laboratory of New Energy and Nanomaterials, School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China;2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;3. Research Center for Humanoid Sensing, Zhejiang Lab, Hangzhou 311100, China |
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| Abstract: | The development of low-cost and high-performance ZnO Schottky photodetectors (PDs) has drawn intensive attention, but still a challenge due to their poor conductivity and low light utilization efficiency. Here, we introduce Ti3C2TX into ZnO films to fabricate Schottky UV PDs via facile spin-coated method. The fabricated ZnO/Ti3C2TX/ZnO compound film shows outstanding performance on photocurrent, responsivity, noise equivalent power (NEP), normalized detection rate (D*), and linear dynamic region (LDR), compared with the original ZnO device. The photocurrent is significantly increased by 466%, and the responsivity is improved by one order of magnitude. In addition, it exhibits relatively low NEP (5.99 × 10−11 W), strong D* (2.53 × 109 Jones), and high LDR (28 dB). The superior performance is ascribed to the enhanced conductivity and light absorption of ZnO film after introduction of Ti3C2TX modification layer, leading to simultaneously faster electron transfer, lower the radiation recombination of electron and holes on the ZnO/Ti3C2TX/ZnO compound film. This work provides a facile way to develop low-cost and high-performance ZnO Schottky PDs. |
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