Proton channeling in silicon at various temperatures

A study was made of the channeling of 6. 72 MeV protons in a silicon crystal at 100–800 °K. The experimental dependence of the limiting channeling angle agrees with the theoretical prediction. A relation is found between the relative number of channeled protons and the temperature.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 60–63, June, 1970.